KSB1098

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KSB1098

KSB1098
Low Frequency Power Amplifier
Low Speed Switchng Industrial Use Complement to KSD1589

TO-220F 2.Collector 3.Emitter

1.Base

PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value - 100 - 100 -7 -5 -8 - 0.5 2 20 150 - 55 150 Units V V V A A A W W C C

PW300 s, Duty Cycle10%

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition VCB - 100V, IE 0 VEB - 5V, IC 0 VCE - 2V, IC - 3A VCE - 2V, IC - 5A IC - 3A, IB - 3mA IC - 3A, IB - 3mA VCC - 50V, IC - 3A IB1 - IB2 - 3mA RL 17 0.5 1 1 2000 500 Min. Typ. Max. -1 -3 15K - 1.5 -2 V V s s s Units A mA

Pulse Test: PW350 s, Duty Cycle2% Pulsed

hFE Classification
Classification hFE1 R 2000 5000 O 3000 7000 Y 5000 15000

2000 Fairchild Semiconductor International

Rev. A, February 2000