KSB1116S

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KSB1116S

KSB1116S
Audio Frequency Power Amplifier Medium Speed Switching

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -60 -50 -6 -1 -2 0.75 150 -55 150 Units V V V A A W C C

PW10ms, Duty Cycle50%

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) VBE (sat) Cob fT tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time Test Condition VCB -60V, IE 0 VEB -6V, IC 0 VCE -2V, IC -100mA VCE -2V, IC -1A VCE -2V, IC -50mA IC -1A, IB -50mA IC -1A, IB -50mA VCB -10V, IE 0, f 1MHz VCE -2V, IC -100mA VCC -10V, IC -100mA IB1 -IB2 -10mA VBE (off) 2 3V 70 135 81 -600 -650 -0.2 -0.9 25 120 0.07 0.7 0.07 Min. Typ. Max. -100 -100 600 -700 -0.3 -1.2 mV V V pF MHz s s s Units nA nA

Pulse Test: PW 350 s, Duty Cycle2%

hFE Classification
Classification hFE1 Y 135 270 G 200 400 L 300 600

2003 Fairchild Semiconductor Corporation

Rev. A, April 2003