KSB1121

KSB1121 PNP Epitaxial Planar Silicon Transistor

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KSB1121 PNP Epitaxial Planar Silicon Transistor

July 2005

KSB1121
PNP Epitaxial Planar Silicon Transistor
High Current Driver Applications
Low Collector-Emitter Saturation Voltage Large Current Capacity Fast Switching Speed Complement to KSD1621

Marking

1 1 P Y
1

2 1 W W
Weekly code Year code hFE grage

SOT-89

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC P C TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Ta 25 C unless otherwise noted

Parameter

Ratings
-30 -25 -6 -2 500 1.3 150 -55 150

Units
V V V A mW W C C

Collector Power Dissipation Junction Temperature Storage Temperature
2

Mounted on Ceramic Board (250mm x 0.8mm)

Electrical Characteristics T
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat)

25 C unless otherwise noted

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Test Condition
IC -10 A, IE 0 IC -1mA, IB 0 IE -10 A, IC 0 VCB -20V, IE 0 VBE -4V, IC 0 VCE -2V, IC -0.1A VCE -2V, IC -1.5A IC -1.5A, IB -75mA IC -1.5A, IB -75mA

Min.
-30 -25 -6

Typ.

Max.

Units
V V V

-100 -100 100 65 -0.35 -0.85 560 -0.6 -1.2

nA nA

V V

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

KSB1121 Rev. B1