KSB1149

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KSB1149

Low Collector Saturation Voltage Built-in Damper Diode at E-C
High DC Current Gain High Power Dissipation : PC 1.3W (Ta 25 C)
1

TO-126 2.Collector 3.Base

1. Emitter

PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value - 100 - 100 -8 -3 -5 1.3 15 150 - 55 150 Units V V V A A W W C C

PW10ms, Duty Cycle50%

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition VCB - 100V, IE 0 VEB - 5V, IC 0 VCE - 2V, IC - 1.5A VCE - 2V, IC - 3A IC - 1.5A, IB - 1.5mA IC - 1.5A, IB - 1.5mA VCC - 40V, IC - 1.5A IB1 - IB2 - 1.5mA RL 27 2000 1000 - 0.9 - 1.5 0.5 2 1 Min. Typ. Max. - 10 -2 20000 - 1.2 -2 V V s s s Units A mA

Pulse test: PW350 s, duty Cycle2% Pulsed

hFE Classification
Classification hFE1 O 2000 5000 Y 4000 12000 G 6000 20000

2000 Fairchild Semiconductor International

Rev. A, February 2000