KSB1151

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KSB1151

KSB1151
Feature
Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC 1.3W (Ta 25 C) Complement to KSD 1691
1

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG
PW10ms, Duty Cycle50%

Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

Value - 60 - 60 -7 -5 -8 -1 1.3 20 150 - 55 150

Units V V V A A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition VCB - 50V, IE 0 VEB - 7V, IC 0 VCE - 1V, IC - 0.1A VCE - 1V, IC - 2A VCE - 2V, IC - 5A IC - 2A, IB - 0.2A IC - 2A, IB - 0.2A VCC - 10V, IC - 2A IB1 - IB2 0.2A RL 5 60 100 50 200 - 0.14 - 0.9 0.15 0.78 0.18 Min. Typ. Max. - 10 - 10 400 - 0.3 - 1.2 1 2.5 1 V V s s s Units A A

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Storage Time Fall Time

Pulse test: PW350 s, Duty Cycle2% Pulsed

hFE Classification
Classification hFE2 O 100 200 Y 160 320 G 200 400

2003 Fairchild Semiconductor Corporation

Rev. B, May 2003