KSB1366

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KSB1366

KSB1366
LOW FREQUENCY POWER AMPLIFIER
Complement to KSD2012

TO-220F 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value - 60 - 60 -7 -3 - 0.5 2 25 150 - 55 150 Units V V V A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC - 50mA, IB 0 VCB - 60V, IE 0 VEB - 7V, IC 0 VCE - 5V, IC - 0.5A VCE - 5V, IC - 3A IC - 2A, IB - 0.2A VCE - 5V, IC - 0.5A VCE - 5V, IC - 0.5A 100 20 - 0.5 - 0.7 9 Min. - 60 Typ. Max. - 100 - 100 320 -1 -1 V V MHz Units V A A

hFE Classification
Classification hFE1 Y 100 200 G 150 320

2000 Fairchild Semiconductor International

Rev. A, February 2000