KSB546

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KSB546

KSB546
TV Vertical Deflection Output
Collector-Base Voltage : VCBO -200V Collector Current : lC -2A Collector Dissipation : PC 25W (TC 25 C) Complement to KSD401
1

TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC)Y Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value - 200 - 150 -5 -2 25 150 - 55 150 Units V V V A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC - 500 A, IE 0 IC - 10mA, IB 0 IE - 500uA, IC 0 VCB - 150V, IE 0 VCE - 10V, IE - 0.4A IC - 500mA, IB - 50mA VCE - 10V, IC - 0.4A 5 40 Min. - 200 - 150 -5 - 50 240 -1 V MHz Typ. Max. Units V V V A

hFE Classification
Classification hFE R 40 80 O 70 140 Y 120 240

2000 Fairchild Semiconductor International

Rev. A, February 2000