KSB596

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KSB596

KSB596
Power Amplifier Applications
Complement to KSD526

TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value - 80 - 80 -5 -4 - 0.4 30 150 - 55 150 Units V V V A A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE (on) fT Cob Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC - 50mA, IB 0 IE - 10mA, IC 0 VCB - 80V, IE 0 VEB - 5V, IC 0 VCE - 5V, IC - 0.5A VCE - 5V, IC - 3A IC - 3A, IB - 0.3A VCE - 5V, IC - 3A VCE - 5V, IC - 0.5A VCB - 10V, IE 0 f 1MHz 3 130 40 15 -1 -1 Min. - 80 -5 - 70 - 100 240 - 1.7 - 1.5 V V MHz pF Typ. Max. Units V V A A

hFE Classification
Classification hFE1 R 40 80 O 70 140 Y 120 240

2000 Fairchild Semiconductor International

Rev. A, February 2000