KSB708

KSB707/708

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KSB707/708

KSB707/708
Low Frequency Power Amplifier
Low Speed Switching Industrial Use Complement to KSD568/569
1

TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature : B707 : B708 Value - 80 - 60 - 80 - 7.0 - 7.0 - 15 - 3.5 40 1.5 150 - 55 150 Units V V V V A A A W W C C

PW300 s, Duty Cycle10%

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition VCB - 60V, IE 0 VEB - 5V, IC 0 VCE - 1V, IC - 3A VCE - 1V, IC - 5A IC - 5A, IB - 0.5A IC - 5A, IB - 0.5A 40 20 Typ. Max. - 10 - 10 200 - 0.5 - 1.5 V V Units A A

Pulse Test: PW350 s, Duty Cycle2%

hFE Cassification
Classification hFE1 R 40 80 O 60 120 Y 100 200

2000 Fairchild Semiconductor International

Rev. A, February 2000