KSB744

KSB744/744A

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KSB744/744A

KSB744/744A
Audio Frequency Power Amplifier
Complement to KSD794/KSD794A

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature : KSB744 : KSB744A Value -70 -45 -60 -5 -3 -5 -0.6 1 10 150 -55 150 Units V V V V A A A W W C C

PW10ms, Duty Cycle50%

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB -45V, IE 0 VEB -3V, IC 0 VCE -5V, IC -20mA VCE -5V, IC -0.5A IC -1.5A, IC -0.15A IC -1.5A, IB -0.15A VCE -5V, IC -0.1A VCB -10V, IE 0 f 1MHz 30 60 120 100 -0.5 -0.8 45 60 Min. Typ. Max. -1 -1 320 -2 -2 V V MHz pF Units A A

Pulse Test: PW350 s, Duty Cycle2% Pulsed

hFE Cassification
Classification hFE2 R 60 120 O 100 200 Y 160 320

2000 Fairchild Semiconductor International

Rev. A, February 2000