KSB772

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KSB772

KSB772
Audio Frequency Power Amplifier
Low Speed Switching Complement to KSD882

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC Rja Rjc TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction to Ambient Junction to Case Junction Temperature Storage Temperature Value - 40 - 30 -5 -3 -7 - 0.6 10 1 132 13.5 150 - 55 150 Units V V V A A A W W C/W C/W C C

PW10ms, Duty Cycle50%

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB - 30V, IE 0 VEB - 3V, IC 0 VCE - 2V, IC - 20mA VCE - 2V, IC - 1A IC - 2A, IB - 0.2A IC - 2A, IB - 0.2A VCE - 5V, IE - 0.1A VCB - 10V, IE 0 f 1MHz 30 60 220 160 - 0.3 - 1.0 80 55 Min. Typ. Max. -1 -1 400 - 0.5 - 2.0 V V MHz pF Units A A

Pulse Test: PW350 s, Duty Cycle2%

hFE Classificntion
Classification hFE2 R 60 120 O 100 200 Y 160 320 G 200 400

2002 Fairchild Semiconductor Corporation

Rev. B, October 2002