KSB795

KSB794/795

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KSB794/795

KSB794/795
Audio Frequency Power Amplifier
Low Speed Switching Industrial Use

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Volage : KSB794 : KSB795 VCEO Collector-Emitter Volage : KSB794 : KSB795 VEBO IC ICP IB PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature - 60 - 80 -8 - 1.5 -3 - 0.15 1 10 150 - 55 150 V V V A A A W W C C R1. 10 k R2. 500 Value - 60 - 80 Units V V

PW300 s, Duty Cycle10%

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) Parameter Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition VCB - 60V, IE 0 VCE - 60V, RBE 51 TC 125 C VCE - 60V, VBE (off) 1.5V VCE - 60V, VBE (off) 1.5V TC 125 C VEB - 5V, IC 0 VCE - 2V, IC - 0.5A VCE - 2V, IC - 1A IC - 1A, IB - 1mA IC - 1A, IB - 1mA 1000 2000 Min. Max. - 10 -1 - 10 -1 -1 30000 -1.5 -2 V V Units A mA A mA mA

Pulse Test: PW350 s, Duty Cycle2% Pulsed.

hFE Classificntion
Classification hFE2 R 2000 5000 O 4000 10000 Y 8000 30000

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001