KSB798

KSB798 PNP Epitaxial Silicon Transistor

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KSB798 PNP Epitaxial Silicon Transistor

July 2005

KSB798
PNP Epitaxial Silicon Transistor
Audio Frequency Power Amplifier
Collector Current : IC -1A Collector Power Dissipation : PC 2W

Marking

7 9 P Y
1

8 W W
Weekly code Year code hFE grage

SOT-89

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)

Ta 25 C unless otherwise noted

Parameter

Ratings
-30 -25 -5 -1.0 -1.5 2.0 150 -55 150

Units
V V V A A W C C

Collector Power Dissipation Junction Temperature Storage Temperature

PW 10ms, Duty cycle 50%

Electrical Characteristics T
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) VBE (on) fT Cob

25 C unless otherwise noted

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance

Test Condition
IC -100 A, IE 0 IC -1mA, IB 0 IE -100 A, IC 0 VCB -30V, IE 0 VEB -5V, IC 0 VCE -1V, IC -0.1A VCE -1V, IC -1.0A IC -1.0A, IB -0.1A IC -1.0A, IB -0.1A VCE -6V, IC -10mA VCE -6V, IC -10mA VCB -6V, IE 0, f 1MHz

Min.
-30 -25 -5

Typ.

Max.

Units
V V V

-0.1 -0.1 90 50 400 -0.4 -1.2 -0.6 110 18 -0.7

A A

V V V MHz pF

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

KSB798 Rev. B1