KSB810

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

KSB810

KSB810
Audio Frequency Amplifier
Complement to KSD1020

TO-92S

1.Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5.0 -700 -1.0 350 150 -55 150 Units V V V mA A mW C C

PW10ms, Duty cycle50%

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) VBE (sat) Cob fT Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter on Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Test Condition VCB -30V, IE 0 VEB -5V, IC 0 VCE -1V, IC -100mA VCE -1V, IC -700mA VCE -6V, IC -10mA IC -700mA, IB -70mA IC -700mA, IB -70mA VCB -6V, IE 0, f 1MHz VCE -6V, IC -10mA 50 70 35 -600 200 100 -640 -0.25 -0.95 17 160 Min. Typ. Max. -100 -100 400 -700 -0.4 -1.2 40 mV V V pF MHz Units nA nA

Pulse Test: PW350 s, Duty cycle2%

hFE Classification
Classification hFE1 O 70 140 Y 120 240 G 200 400

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001