KSB811

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KSB811

KSB811
Audio Frequency Power Amplifier
Complement to KSD1021 Collector Current : IC -1A Collector Power Dissipation : PC 350mW

TO-92S

1.Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5 -1.0 350 150 -55 150 Units V V V A mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC -100 A, IE 0 IC -10mA, IB 0 IE -100 A, IC 0 VCB -30V, IE 0 VCE -1V, IC -100mA IC -1A, IB -0.1A IC -1A, IB -0.1A VCE -6V, IC -10mA VCB -6V, IE 0, f 1MHz 110 18 70 Min. -30 -25 -5 -0.1 400 -0.5 -1.2 V V MHz pF Typ. Max. Units V V V A

hFE Classification
Classification hFE O 70 140 Y 120 240 G 200 400

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001