KSB834W

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KSB834W

KSB834W
Low Frequency Power Amplifier
Complement to KSD880W

D2-PAK 3.Emitter

1.Base 2.Collector

PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value - 60 - 60 -7 -3 - 0.5 30 1.5 150 - 55 150 Units V V V A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO IEBO BVCEO hFE1 hFE2 VCE(sat) VBE (on) fT Cob tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCB - 60V, IE 0 VEB - 7V, IC 0 IC - 50mA, IB 0 VCE - 5V, IC - 0.5A VCE - 5V, IC - 3A IC - 3A, IB - 0.3A VCE - 5V, IC - 0.5A VCE - 5V, IC - 0.5A VCB - 10V, IE 0 f 1MHz VCC -30V, IC - 1A IB1 - IB2 - 0.2A RL 30 - 60 60 20 - 0.5 - 0.7 9 150 0.4 1.7 0.5 200 -1 -1 V V MHz pF s s s Min. Typ. Max. - 100 - 100 Units A A V

hFE Classification
Classification hFE1 O 60 120 Y 100 200

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001