KSB906

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KSB906

KSB906
Low Frequency Power Amplifier
Low Collector- Emitter Saturation Voltage Complement to KSD1221

I-PAK

1. Base 2. Collector 3. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value - 60 - 60 -7 -3 - 0.5 20 1 150 - 55 150 Units V V V A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition IC - 50mA, IB 0 VCB - 60V, IE 0 VEB - 7V, IC 0 VCE - 5V, IC - 0.5A VCE - 5V, IC - 3A IC - 3A, IB - 0.3A VCE - 5V, IC - 0.1A VCE - 5V, IC - 0.5A VCB - 10V, f 1MHz VCC -30V, IC - 1A IB1 - IB2 - 0.2A RL 30 60 20 -1 -1 9 150 0.4 1.7 0.5 Min. - 60 Typ. Max. - 100 - 100 200 - 1.7 - 1.5 V V MHz pF s s s Units V A A

hFE Classification
Classification hFE O 60 120 Y 100 200

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001