KSC1008 NPN Epitacial Silicon Transistor
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KSC1008 NPN Epitacial Silicon Transistor
September 2006
KSC1008
NPN Epitacial Silicon Transistor
Features
Low frequency amplifier medium speed switching. High Collector-Base Voltage : VCBO 80V. Collector Current : IC 700mA Collector Power Dissipation : PC 800mW Suffix "-C" means Center Collector (1.Emitter 2.Collector 3.Base) Non suffix "-C" means Side Collector (1.Emitter 2.Base 3.Collector) Complement to KSA708 KSC1008
1 2 3
tm
TO-92
: 1. Emitter 2. Base
3. Collector
KSC1008C : 1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings T
Symbol
VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature
a
25 C unless otherwise noted
Parameter
Value
80 60 8 700 800 150 -55 150
Units
V V V mA mW C C
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob
a
25 C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance
Test Condition
IC 100 A, IE 0 IC 10mA, IB 0 IE 10 A, IC 0 VCB 60V, IE 0 VEB 5V, IC 0 VCE 2V, IC 50mA IC 500mA, IB 50mA IC 500mA, IB 50mA VCE 10V, IC 50mA VCB 10V, IE 0, f 1MHz
Min.
80 60 8
Typ.
Max.
Units
V V V
0.1 0.1 40 0.2 0.86 30 50 8 400 0.4 1.1
A A
V V MHz pF
DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2%
hFE Classification
Classification hFE R 40 80 O 70 140 Y 120 240 G 200 400
2006 Fairchild Semiconductor Corporation
1
KSC1008 Rev. B
KSC1008 Datasheet Fairchild Download PDF
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