KSC1009

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KSC1009

KSC1009
High Voltage Amplifier
High Collector-Base Voltage : VCBO 160V Collector Current : IC 700mA Collector Power Dissipation : PC 800mW Complement to KSA709 Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base)
1

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 160 140 8 700 800 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC 100 A, IE 0 IC 10mA, IB 0 IE 10 A, IC 0 VCB 60V, IE 0 VEB 5V, IC 0 VCE 2V, IC 50mA IC 200mA, IB 20mA IC 200mA, IB 20mA VCE 10V, IC 50mA VCB 10V, IE 0, f 1MHz 30 40 0.2 0.86 50 8 Min. 160 140 8 0.1 0.1 400 0.7 1.0 V V MHz pF Typ. Max. Units V V V A A

hFE Classification
Classification hFE R 40 80 O 70 140 Y 120 240 G 200 400

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001