KSC1173

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KSC1173

KSC1173
Low Frequency Power Amplifier Power Regulator
Collector Current : IC 3A Collector Dissipation : PC 10W (TC 25 C) Complement to KSA473
1

TO-220 2.Collector 3.Emitter

1.Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value 30 30 5 3 10 150 - 55 150 Units V V V A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Base Width Product Output Capacitance Test Condition IC 500 A, IE 0 IC 10mA IB 0 IE -1mA, IC 0 VCB 20V, IE 0 VEB 5V, IC 0 VCE 2V, IC 0.5A VCE 2V, IC 2.5A IC 2A, IB 0.2A VCE 2V, IC 0.5A VCE 2V, IC 0.5A VCB 10V, IE 0, f 1MHz 70 25 0.3 0.75 100 35 Min. 30 30 5 1.0 1.0 240 0.8 1.0 V V MHz pF A A Typ. Max. Units V V

hFE Classification
Classification hFE1 O 70 140 Y 120 240

2000 Fairchild Semiconductor International

Rev. A, February 2000