KSC1187

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KSC1187

KSC1187
TV 1st, 2nd Picture IF Amplifier (Forward AGC)
High Current Gain Bandwidth Product : fT 700MHz High Power Gain : GPE 24dB (TYP.) at f 45MHz

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 20 4 30 250 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE fT CRE GPE VAGC Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Current Gain Bandwidth Product Reverse Transfer Capacitance Power Gain AGC Voltage Test Condition IC 10 A, IE 0 IC 5mA, IB 0 IE 10 A, IC 0 VCB 20V, IE 0 VCE 10V, IC 2mA VCE 10V, IC 3mA VCB 10V, IE 0, f 1MHz VCE 10V, IC 3mA f 45MHz GR 30dB, f 45MHz 20 4.4 40 400 700 0.6 24 5.2 6.0 Min. 30 25 4 0.1 240 MHz pF dB V Typ. Max. Units V V V A

hFE Classification
Classification hFE R 40 80 O 70 140 Y 120 240

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001