KSC1623

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KSC1623

KSC1623
Low Frequency Amplifier High Frequency OSC.
Complement to KSA812
2 1

SOT-23

1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 60 50 5 100 200 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol ICBO IEBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB 60V, IE 0 VEB 5V, IC 0 VCE 6V, IC 1mA IC 100mA, IB 10mA IC 100mA, IB 10mA VCE 6V, IC 1mA VCE 6V, IC 10mA VCB 6V, IE 0, f 1MHz 0.55 90 200 0.15 0.86 0.62 250 3 Min. Typ. Max. 0.1 0.1 600 0.3 1.0 0.65 V V V MHz pF Units A A

hFE Classification
Classification hFE O 90 180 Y 135 270 G 200 400 L 300 600

Marking

C1 O
hFE grade

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002