KSC1675

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KSC1675

KSC1675
FM/AM RF AMP, MIX, CONV,OSC,IF
Collector-Base Voltage : VCEO 30V High Current Gain Bandwidth Product : fT 300MHz (TYP.) Low Collector Capacitance : COB 2.0pF (TYP.) Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 30 5 50 250 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VBE (on) VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC 10 A, IE 0 IC 5mA, IB 0 IE 10 A, IC 0 VCB 50V, IE 0 VEB 5V, IC 0 VCE 6V, IC 1mA VCE 6V, IC 1mA IC 10mA, IB 1mA VCE 6V, IC 1mA VCB 6V, IE 0, f 1MHz 150 40 0.67 0.08 300 2.0 2.5 Min. 50 30 5 0.1 0.1 240 0.75 0.3 V V MHz pF Typ. Max. Units V V V A A

hFE Classification
Classification hFE R 40 80 O 70 140 Y 120 240

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002