KSC2001

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KSC2001

KSC2001
General Purpose Applications
High hFE and Low VCE (sat)

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 25 5 700 150 600 150 -55 150 Units V V V mA mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol VBE (on) ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) Cob fT Parameter Base Emitter On Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Test Condition VCE 6V, IC 10mA VCB 30V, IE 0 VEB 5V, IC 0 VCE 1V, IC 100mA VCE 1V, IC 700mA IC 700mA, IB 70mA IC 700mA, IB 70mA VCB 6V, IE 0, f 1MHz VCE 6V, IC 10mA 50 90 50 200 140 0.2 0.95 13 170 Min. 600 Typ. 640 Max. 700 100 100 400 0.6 1.2 25 V V pF MHz Units mV nA nA

Pulse test: PW350 s, Duty cycle2%

hFE Classification
Classification hFE1 O 90 180 Y 135 270 G 200 400

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002