KSC2223

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KSC2223

KSC2223
High Frequency Amplifier
Very small size to assure good space factor in Hybrid IC applications fT 600MHz (TYP) at IC 1mA Cob 1pF (TYP) at VCB 6V NF 3dB (TYP) at f 100MHz
3

2 1

SOT-23

1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 20 4 20 150 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol ICBO hFE VCE (sat) Cob fT Cc rbb NF Parameter Collector Cut-off Current DC Current Gain Collector Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Time Constant Noise Figure Test Condition VCB 30V, IE 0 VCE 6V, IC 1mA IC 10mA, IB 1mA VCB 6V, IE 0, f 1MHz VCE 6V, IC 1mA VCB 6V, IC 1mA f 31.9MHz VCE 6V, IC 1mA f 100MHz, RS 50 400 Min. 40 Typ. 90 0.1 1 600 12 3 Max. 0.1 180 0.3 V pF MHz ps dB Units A

hFE Classification
Classification hFE R 40 80 Marking O 60 120 Y 90 180

H5 O
hFE grade

2002 Fairchild Semiconductor Corporation

Rev. A3, September 2002