KSC2258A

KSC2258/2258A

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KSC2258/2258A

KSC2258/2258A
High Voltage General Amplifier TV Video Output Amplifier
High BVCEO

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSC2258 : KSC2258A VCEO Collector-Emitter Voltage : KSC2258 : KSC2258A VEBO IC ICP PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature 250 300 6 100 150 4 150 - 55 150 V V V mA mA W C C 250 300 V V Value Units

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVEBO ICER hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IE 0.1mA, IC 0 VCE 250V, RBE 100K VCE 20V, IC 40mA VCE 50V, IC 5mA IC 50mA, IB 5mA VCE -20V, IC 40mA VCE 10V, IC 10mA VCB 50V, f 1MHz 100 3 4.5 40 30 1.2 1.2 V V MHz pF Min. 6 Typ. Max. 100 Units V A

2000 Fairchild Semiconductor International

Rev. A, February 2000