KSC2310

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KSC2310

KSC2310
High Voltage Power Amplifier
Collector-Base Voltage : VCBO 200V Current Gain Bandwidth Product : fT 100MHz

TO-92L

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 200 150 5 50 800 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC 100 A, IE 0 IC 5mA, IB 0 IE 100 A, IC 0 VCB 200V, IE 0 VCE 5V, IC 10mA IC 10mA, IB 1mA VCE 30V, IC 10mA VCB 10V, IE 0, f 1MHz 100 3.5 5 40 Min. 200 150 5 0.1 240 0.5 V MHz pF Typ. Max. Units V V V A

hFE Classification
Classification hFE R 40 80 O 70 140 Y 120 240

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002