KSD985

KSD985/986

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KSD985/986

KSD985/986
Low Frequency Power Amplifier
Low Speed Switching Industrial Use

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Volage : KSD985 : KSD986 VEBO IC ICP IB PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature 60 80 8.0 1.5 3.0 0.15 1.0 10 150 - 55 150 V V V A A A W W C C Value 150 Units V

PW300 s, Duty Cycle10%

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Test Condition VCB 60V, IE 0 VCE 60V, RBE 51 TC 125 C VCE 60V, VBE(off) -1.5A VCE 60V, VBE(off) -1.5A TC 125 C VEB 5V, IC 0 VCE 2V, IC 0.5A VCE 2V, IC 1A IC 1A, IB 1mA IC 1A, IB 1mA VCC 50V, IC 1A IB1 - IB2 1mA RL 50 0.5 1.0 1.0 1000 2000 Min. Typ. Max. 10 1.0 10 1.0 1.0 30000 1.5 2.0 V V s s s Units A mA A mA mA

Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time

Pulse Test: PW350 s, Duty Cycle2%

hFE Classification
Classification hFE2 R 2000 5000 O 4000 10000 Y 8000 30000

2000 Fairchild Semiconductor International

Rev. A, February 2000