KSE13003T

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KSE13003T

KSE13003T
High Voltage Switch Mode Applications
High Speed Switching Suitable for Switching Regulator and Motor Control

TO-220 2.Collector 3.Emitter

1.Base

NPN Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value 700 400 9 1.5 3 0.75 30 150 - 65 150 Units V V V A A A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO IEBO hFE VCE(sat) Parameter Collector-Emitter Breakdown Voltage Emitter Cut-off Current DC Current Gain Collector Emitter Saturation Voltage Test Condition IC 5mA, IB 0 VEB 9V, IC 0 VCE 2V, IC 0.5A VCE 2V, IC 1A IC 0.5A, IB 0.1A IC 1A, IB 0.25A IC 1.5A, IB 0.5A IC 0.5A, IB 0.1A IC 1A, IB 0.25A VCB 10V , f 0.1MHz VCE 10V, IC 0.1A VCC 125V, IC 1A IB1 0.2A, IB2 - 0.2A RL 125 4 1.1 4.0 0.7 21 8 5 Min. 400 Typ. Max. 10 40 0.5 1 3 1 1.2 V V V V V pF MHz s s s Units V A

VBE(sat) Cob fT tON tSTG tF

Base Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time

Pulse Test: Pulse Width 5ms, Duty Cycle10%

2002 Fairchild Semiconductor Corporation

Rev. B, December 2002