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KSE172

By datasheet - April 3rd, 2008

KSE170/171/172

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KSE170/171/172

KSE170/171/172
Low Power Audio Amplifier Low Current, High Speed Switching Applications

1

TO-126 2.Collector 3.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSE170 : KSE171 : KSE172 : KSE170 : KSE171 : KSE172

1. Emitter

Value - 60 - 80 - 100 - 40 - 60 - 80 -7 -3 -6 -1 12.5 1.5 150 - 65 150

Units V V V V V V V A A A W W C C

VCEO

Collector-Emitter Voltage

VEBO IC ICP IB PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breaksown Voltage : KSE170 : KSE171 : KSE172 Collector Cut-off Current : KSE170 : KSE171 : KSE172 : KSE170 : KSE171 : KSE172 Test Condition IC 10mA, IB 0 Min. -40 -60 -80 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 50 30 12 250 Max. Units V V V A A A mA mA mA A

ICBO

VCB - 60V, IB 0 VCB - 80V, IE 0 VCB - 100V, IE 0 VCB - 60V, IE 0, TC 150 C VCB - 80V, IE 0, TC 150 C VCB - 100V, IE 0, TC 150 C VBE - 7V, IC 0 VCE - 1V, IC - 100mA VCE - 1V, IC - 500mA VCE - 1V, IC - 1.5A IC - 500mA, IB - 50mA IC - 1.5A, IB - 150mA IC - 3A, IB - 600mA IC - 1.5A, IB - 150mA IC - 3A, IB - 600mA VCE - 1V, IC - 500mA VCE - 10V, IC - 100mA VCB - 10V, IE 0, f 0.1MHz 50

IEBO hFE

Emitter Cut-off Current DC Current Gain

VCE(sat)

Collector-Emitter Saturation Voltage

-0.3 -0.9 -1.7 -1.5 -2.0 -1.2 50

V V V V V V MHz pF

VBE(sat) VBE(on) fT Cob

Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance

2001 Fairchild Semiconductor Corporation

Rev. A1, January 2001

KSE172 Datasheet Fairchild Download PDF

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