KSE2955T

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KSE2955T

KSE2955T
General Purpose and Switching Applications
DC Current Gain Specified to IC 10 A High Current Gain Bandwidth Product : fT 2MHz (Min.)

TO-220 2.Collector 3.Emitter

1.Base

PNP Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value - 70 - 60 -5 - 10 -6 75 0.6 150 - 55 150 Units V V V A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICEO ICEX1 ICEX2 IEBO hFE VCE(sat) VBE (on) fT Parameter Collector- Emitter Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Test Condition IC - 200mA, IB 0 VCE - 30V, IB 0 VCE - 70V, VBE(off) 1.5V VCE - 70V, VBE(off) 1.5V TC 150 C VEB - 5V, IC 0 VCE - 4V, IC - 4A VCE - 4V, IC - 10A IC - 4A, IB - 0.4A IC - 10A, IB - 3.3A VCE - 4V, IC - 4A VCE - 10V, IC - 500mA 2 20 5 Min. -60 Max. -700 -1 -5 -5 100 -1.1 -8 -1.8 V V V MHz Units V A mA mA mA

Pulse test: PW300 s, duty cycle2% Pulse

2000 Fairchild Semiconductor International

Rev. A1, December 2000