KSE350

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KSE350

KSE350
High Voltage General Purpose Applications
High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to KSE340

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value - 300 - 300 -5 - 500 20 150 - 65 150 Units V V V mA W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC - 1mA, IB 0 VCB - 300V, IE 0 VBE - 3V, IC 0 VCE - 10V, IC - 50mA 30 Min. -300 Max. -100 -100 240 Units V A A

2000 Fairchild Semiconductor International

Rev. A1, December 2000