KSE44H

KSE44H Series

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KSE44H Series

KSE44H Series
General Purpose Power Switching Applications
Low Collector-Emitter Saturation Voltage : VCE(sat) 1V (Max.) 8A Fast Switching Speeds Complement to KSE45H

TO-220 2.Collector 3.Emitter

1.Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO Collector-Emitter Voltage Parameter : KSE44H 1,2 : KSE44H 4,5 : KSE44H 7,8 : KSE44H 10,11 Value 30 45 60 80 5 10 20 50 1.67 150 - 55 150 Units V V V V V A A W W C C

VEBO IC ICP PC PC TJ TSTG

Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICES IEBO hFE Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain : KSE44H 1,4,7,10 : KSE44H 2,5,8,11 Collector-Emitter Saturation Voltage : KSE44H 1, 4, 7 10 : KSE44H 2, 5, 8,11 Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE Rated VCEO, VEB 0 VEB 5V, IC 0 VCE 1V, IC 2A 35 60 1 1 1.5 50 130 300 500 140 V V V MHz pF ns ns ns Min. Typ. Max. 10 100 Units A A

VCE(sat)

IC 8A, IB 0.8A IC 8A, IB 0.4A IC 8A, IB 0.8A VCE 10V, IC 0.5A VCB 10V, f 1MHz VCC 20V, IC 5A IB1 - IB2 0.5A

VBE (sat) fT Cob tON tSTG tF

Pulse test: PW300 s, Duty cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001