KSE45H

KSE45H Series

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KSE45H Series

KSE45H Series
General Purpose Power Switching Applications
Low Collector-Emitter Saturation Voltage: VCE(sat) -1V (MAX) -8A Fast Switching Speeds Complement to KSE44H TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO Collector-Emitter Voltage Parameter : KSE45H 1,2 : KSE45H 4,5 : KSE45H 7,8 : KSE45H 10,11 Value - 30 - 45 - 60 - 80 -5 - 10 - 20 50 1.67 150 - 55 150 Units V V V V V A A W W C C

VEBO IC ICP PC PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICES IEBO hFE Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain : KSE45H 1, 4, 7 10 : KSE45H 2, 5, 8,11 Collector-Emitter Saturation Voltage : KSE45H 1, 4, 7 10 : KSE45H 2, 5, 8,11 Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE Rated, VCEO, VEB 0 VEB - 5V, IC 0 VCE - 1V, IC - 2A 35 60 -1 -1 -1.5 40 230 135 500 100 V V V MHz pF ns ns ns Min. Typ. Max. -10 -100 Units A A

VCE(sat)

IC - 8A, IB - 0.8A IC - 8A, IB - 0.4A IC - 8A, IB - 0.8A VCE - 10V, IC - 0.5A VCB - 10V, f 1MHz VCC 20V, IC - 5A IB1 - IB2 - 0.5A

VBE(sat) fT Cob tON tSTG tF

Pulse test: PW300 s, Duty cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001