KSE5020

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KSE5020

KSE5020
Feature
High Voltage, High Quality High Speed Switching : tF 0.1 s WIDE SOA

TO-126 2.Collector 3.Base

1. Emitter

NPN Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value 800 500 7 3 6 1 30 150 - 55 150 Units V V V A A A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO VCEX(sus) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tS tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time Test Condition IC 1mA, IE 0 IC 5mA, RBE IE 1mA, IC 0 IC 1.5A, IB1 -IB2 0.6A L 2mH, Clamped VCB 500V, IE 0 VEB 5V, IC 0 VCE 5V, IC 0.3A VCE 5V, IC 1.5A IC 1.5A, IB 0.3A IC 1.5A, IB 0.3A VCB 10V, f 1MHz VCE 10V, IC 0.3A VCC 200V 5IB1 -2.5IB2 IC 2A RL 100 50 18 0.5 3 0.3 15 8 Min. 800 500 7 500 10 10 50 1 1.5 V V pF MHz s s s Typ. Max. Units V V V V A A

hFE Classification
Classification hFE1
2001 Fairchild Semiconductor Corporation

R 15 30

O 20 40

Y 30 50
Rev. A1, June 2001