KSH112I

KSH112

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

KSH112

KSH112
D-PAK for Surface Mount Applications
High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, " - I " Suffix) Electrically Similar to Popular TIP112

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value 100 100 5 2 4 50 20 1.75 150 - 65 150 Units V V V A A mA W W C C
R1 R2 E B Equivalent Circuit C

R 1 10 k R 2 0.6 k

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) ICEO ICBO IEBO hFE Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC 30mA, IB 0 VCE 50V, IB 0 VCB 100V, IB 0 VEB 5V, IC 0 VCE 3V, IC 0.5A VCE 3V, IC 2A VCE 3V, IC 4A IC 2A, IB 8mA IC 4A, IB 40mA IC 4A, IB 40mA VCE 3A, IC 2A VCE 10V, IC 0.75A VCB 10V, IE 0 f 0.1MHz 25 100 500 1000 200 Min. 100 Max. 20 20 2 12K 2 3 4 2.8 V V V V MHz pF Units V A A mA

VCE(sat) VBE(sat) VBE(on) fT Cob

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance

Pulse Test: PW300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A4, October 2002