KSH122

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KSH122

KSH122
D-PAK for Surface Mount Applications
High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, " - I " Suffix) Electrically Similar to Popular TIP122 Complement to KSH127

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value 100 100 5 8 16 120 20 1.75 150 - 65 150 Units V V V A A mA W W C C
R1 R2 E B Equivalent Circuit C

R1 8k R 2 0.12 k

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) ICEO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) Cob Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Test Condition IC 30mA, IB 0 VCE 50V, IB 0 VCB 100V, IE 0 VEB 5V, IC 0 VCE 4V, IC 4A VCE 4V, VEB 8A IC 4A, IB 16mA IC 8A, IB 80mA IC 8A, IB 80mA VCE 4V, IC 4A VCB 10V, IE 0 f 0.1MHz 1000 100 Min. 100 Max. 10 10 2 12K 2 4 4.5 2.8 200 V V V V pF Units V A A mA

Pulse Test: PW300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A4, October 2002