KSH200

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KSH200

KSH200
D-PAK for Surface Mount Applications
High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, " - I " Suffix)

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IB IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value 40 25 8 1 5 10 12.5 1.4 150 - 55 150 Units V V V A A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCBO(sus) ICEO ICBO IEBO hFE VCE (sat) Parameter Collector Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC 100mA, IB 0 VCB 40V, IE 0 VEBO 8V, IC 0 VCE 1V, IC 500mA VCE 1V, IC 2A VCE 2V, IC 5A IC 500mA, IB 50mA IC 2A, IB 200mA IC 5A, IB 1A IC 5A, IB 2A VCE 1V, IC 2A VCE 10V, IC 100mA VCB 10V, IE 0, f 0.1MHz 65 80 70 45 10 180 0.3 0.75 1.8 2.5 1.6 V V V V V MHz pF Min. 25 Max. 100 100 Units V nA nA

VBE (sat) VBE (on) fT Cob

Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance

Pulse Test: PW300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A3, October 2002