KSH29C

KSH29/29C

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KSH29/29C

KSH29/29C
General Purpose Amplifier Low Speed Switching Applications
Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular TIP29 and TIP29C
1

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSH29 : KSH29C VCEO Collector-Emitter Voltage : KSH29 : KSH29C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) TJ TSTG Junction Temperature Storage Temperature 40 100 40 100 5 1 3 0.4 15 1.56 150 - 65 150 V V V V V A A A W W C C Value Units

VEBO IC ICP IB PC

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSH29 : KSH29C Collector Cut-off Current : KSH29 : KSH29C ICES Collector Cut-off Current : KSH29 : KSH29C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE 40V, VBE 0 VCE 100V, VBE 0 VBE 5V, IC 0 VCE 4V, IC 0.2A VCE 4V, IC 1A IC 1A, IB 125mA VCE 4A, IC 1A VCE 10V, IC 200mA 3 40 15 20 20 1 75 0.7 1.3 V V MHz A A mA VCE 40V, IB 0 VCE 60V, IB 0 50 50 A A Test Condition IC 30mA, IB 0 Min. 40 100 Max. Units V V

ICEO

2002 Fairchild Semiconductor Corporation

Rev. A4, October 2002