KSH30

KSH30/30C

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KSH30/30C

KSH30/30C
General Purpose Amplifier Low Speed Switching Applications
Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular TIP30 and TIP30C
1

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSH30 : KSH30C VCEO Collector-Emitter Voltage : KSH30 : KSH30C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) TJ TSTG Junction Temperature Storage Temperature - 40 - 100 - 40 - 100 -5 -1 -3 - 0.4 15 1.56 150 - 65 150 V V V V V A A A W W C C Value Units

VEBO IC ICP IB PC

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSH30 : KSH30C Collector Cut-off Current : KSH30 : KSH30C ICES Collector Cut-off Current : KSH30 : KSH30C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE - 40V, VBE 0 VCE 100V, VBE 0 VBE - 5V, IC 0 VCE - 4V, IC - 0.2A VCE - 4V, IC - 1A IC - 1A, IB - 125mA VCE - 4A, IC - 1A VCE - 10V, IC - 200mA 3 40 15 - 20 - 20 -1 75 - 0.7 - 1.3 V V MHz A A mA VCE - 40V, IB 0 VCE - 60V, IB 0 - 50 - 50 A A Test Condition IC - 30mA, IB 0 Min. - 40 - 100 Max. Units V V

ICEO

Pulse Test: PW300ms, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. B3, October 2002