KSH32C

KSH32/32C

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KSH32/32C

KSH32/32C
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular TIP32 and TIP32C
1

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Parameter : KSH32 : KSH32C : KSH32 : KSH32C Value - 40 - 100 - 40 - 100 -5 -3 -5 -1 15 1.56 150 - 65 150 Units V V V V V A A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSH32 : KSH32C Collector Cut-off Current : KSH32 : KSH32C ICES Collector Cut-off Current : KSH32 : KSH32C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE - 40V, VBE 0 VCE - 100V, VBE 0 VBE - 5V, IC 0 VCE - 4V, IC - 1A VCE - 4V, IC - 3A IC - 3, IB - 375mA VCE - 4A, IC - 3A VCE -10V, IC - 500mA 3 25 10 -20 -20 -1 50 -1.2 -1.8 V V MHz A A mA VCE - 40V, IB 0 VCE - 60V, IB 0 -50 -50 A A Test Condition IC - 30mA, IB 0 Min. -40 -100 Max. Units V V

ICEO

Pulse Test: PW300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A4, October 2002