KSH45H11

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KSH45H11

KSH45H11
General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular KSE45H Fast Switching Speeds Low Collector Emitter Saturation Voltage
1

D-PAK 1.Base

I-PAK 3.Emitter

2.Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Value - 80 -5 -8 - 16 20 1.75 150 - 55 150 Units V V A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) ICEO IEBO hFE VCE(sat) VBE(on) fT Cob tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector Capacitance Turn On Time Storage Time Fall Time Test Condition IC - 30mA, IB 0 VCE - 80V, IB 0 VBE - 5V, IC 0 VCE - 1V, IC - 2A VCE - 1V, IC - 4A IC - 8A, IB - 0.4A IC - 8A, IB - 0.8A VCE - 10A, IC - 0.5A VCB - 10V, f 1MHz IC - 5A IB1 - IB2 - 0.5A 40 230 135 500 100 60 40 -1 - 1.5 V V MHz pF ns ns ns Min. - 80 Typ. Max. - 10 - 50 Units V A A

Pulse Test: PW300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A4, October 2002