KSK30

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KSK30

KSK30
Low Noise PRE-AMP. Use
High Input Impedance: IGSS 1nA (MAX) Low Noise: NF 0.5dB (TYP) High Voltage: VGDS -50V

TO-92

1. Source 2. Gate 3. Drain

Silicon N-channel Junction Fet
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VGDS IG PD TJ TSTG Parameter Gate-Drain Voltage Gate-Current Collector Dissipation Junction Temperature Storage Temperature Ratings -50 10 100 125 -55 125 Units V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVGDS IGSS IDSS VGS (off) YFS Ciss Crss NF Parameter Gate-Drain Breakdown Voltage Gate Leak Current Drain Leak Current Gate-Source Voltage Forward Transfer Admittance Input Capacitance Feedback Capacitance Noise Figure Test Condition VDS 0, IG -100 A VGS -30V, VDS 0 VDS 10V, VGS 0 VDS 10V, ID 0.1 A VDS 10V, VGS 0, f 1KHz VDS 0, VGS 0, f 1MHz VGD 10V, VDS 0 f 1MHz VDS 15V, VGS 0 RG 100K f 120Hz 0.3 -0.4 1.2 8.2 2.6 0.5 5 Min. -50 Typ. Max. -1 6.5 -5 Units V nA mA V mS pF pF dB

IDSS Classification
Classification IDSS(mA) R 0.30 0.75 O 0.60 1.40 Y 1.20 3.00 G 2.60 6.50

2002 Fairchild Semiconductor Corporation

Rev. B1, November 2002