KSK595H

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KSK595H

KSK595H
Capacitor Microphone Applications
Especially Suited for use in Audio, Telephone Capacitor Microphones Excellent Voltage Characteristic Excellent Transient Characteristic
3

2 1

SOT-23

1.Drain 2. Source 3. Gate

Si N-channel Junction FET
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VGDO IG ID PD TJ TSTG Parameter Gate-Drain Voltage Gate Current Drain Current Power Dissipation Junction Temperature Storage Temperature Ratings -20 10 1 100 150 -55 150 Units V mA mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVGDO VGS(off) IDSS lYFSl Ciss Crss Parameter Gate-Drain Breakdown Voltage Gate-Source Cut-off Voltage Drain Current Forward Transfer Admittance Input Capacitance Output Capacitance Test Condition IG -100uA VDS 5V, ID 1 A VDS 5V, VGS 0 VDS 5V, VGS 0, f 1MHz VDS 5V, VGS 0, f 1MHz VDS 5V, VGS 0, f 1MHz 150 0.4 1.2 3.5 0.65 Min. -20 Typ. -0.6 Max. -1.5 350 Units V V A ms pF pF

2002 Fairchild Semiconductor Corporation

Rev. C1, October 2002