KSP05

KSP05/06

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KSP05/06

KSP05/06
Amplifier Transistor
Collector-Emitter Voltage: VCEO KSP05: 60V KSP06: 80V Collector Dissipation: PC (max) 625mW Complement to KSP55/56

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO Parameter Collector Base Voltage : KSP05 : KSP06 VCEO Collector-Emitter Voltage : KSP05 : KSP06 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 60 80 4 500 625 150 -55 150 V V V mA mW C C 60 80 V V Value Units

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : KSP05 : KSP06 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP05 : KSP06 ICEO hFE VCE (sat) VBE (on) fT Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCB 60V, IE 0 VCB 80V, IE 0 VCE 60V, IB 0 VCE 1V, IC 10mA VCE 1V, IC 100mA IC 100mA, IB 10mA VCE 1V, IC 100mA VCE 2V, IC 10mA f 100MHz 100 50 50 0.25 1.2 V V MHz 0.1 0.1 0.1 A A A Test Condition IC 1mA, IB 0 Min. 60 80 IE 100 A, IC 0 4 Max. Units V V V

BVEBO ICBO

Pulse Test: PW300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002