KSP12

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KSP12

KSP12
Darlington Transistor
Collector-Emitter Voltage: VCES 20V Collector Power Dissipation: PC (max) 625mW

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCES VEBO PC TJ TSTG Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation Junction Temperature Storage Temperature Value 20 10 625 150 -55 150 Units V V mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCES ICBO ICES IEBO hFE VCE (sat) VBE (on) Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Test Condition IC 100 A, IB 0 VCB 15V, IE 0 VCE 15V, IB 0 VEC 10V, IC 0 VCE 5V, IC 10mA IC 10mA, IB 0.01mA VCE 5V, IC 10mA 20K 1 1.4 V V Min. 20 Typ. . Max. 100 100 100 Units V nA nA nA

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002