KSP13

KSP13/14

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KSP13/14

KSP13/14
Darlington Transistor
Collector-Emitter Voltage: VCES 30V Collector Power Dissipation: PC (max) 625mW

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCES VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 10 500 625 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCES ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain : KSP13 : KSP14 : KSP13 : KSP14 VCE (sat) VBE (on) fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE 5V, IC 10mA VCE 5V, IC 100mA IC 100mA, IB 0.1mA VCE 5V, IC 100mA VCE 5V, IC 10mA f 100MHz 125 5K 10K 10K 20K 1.5 2.0 V V MHz Test Condition IC 100 A, IB 0 VCB 30V, IE 0 VEB 10V, IC 0 Min. 30 Max. 100 100 Units V nA nA

Pulse Test: Pulse Width300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002