KSP25

KSP25/26/27

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

KSP25/26/27

KSP25/26/27
Darlington Transistor
Collector-Emitter Voltage: VCES KSP25: 40V KSP26: 50V KSP27: 60V Collector Power Dissipation: PC (max) 625mW TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCES Parameter Collector-Emitter Voltage : KSP25 : KSP26 : KSP27 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 40 50 60 10 500 625 150 -55 150 V V V V mA mW C C Value Units

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCES Parameter Collector-Emitter Breakdown Voltage : KSP25 : KSP26 : KSP27 Collector-Base Breakdown Voltage : KSP25 : KSP26 : KSP27 Collector Cut-off Current : KSP25 : KSP26 : KSP27 IEBO hFE VCE (sat) VBE (on) Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE 30V, IE 0 VCE 40V, IE 0 VCE 50V, IE 0 VEB 10V, IB 0 VCE 5V, IC 10mA VCE 5V, IC 100mA IC 100mA, IB 0.1mA VCE 5V, IC 100mA 10K 10K 1.5 2 V V 100 100 100 100 nA nA nA nA Test Condition IC 100 A, IE 0 Min. 40 50 60 IC 100 A, IE 0 40 50 60 V V V Max. Units V V V

BVCBO

ICBO

Pulse Test: PW300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002