KSP42/43

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KSP42/43

KSP42/43
High Voltage Transistor
Collector-Emitter Voltage: VCEO KSP42: 300V KSP43: 200V Collector Power Dissipation: PC(max) 625mW
1

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO Parameter Collector Base Voltage : KSP42 : KSP43 VCEO Collector-Emitter Voltage : KSP42 : KSP43 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 300 200 6 500 625 150 -55 150 V V V mA mW C C 300 200 V V Value Units

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP42 : KSP43 Collector -Emitter Breakdown Voltage : KSP42 : KSP43 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP42 : KSP43 IEBO Emitter Cut-off Current : KSP42 : KSP43 hFE DC Current Gain VBE 6V, IC 0 VBE 4V, IC 0 VCE 10V, IC 1mA VCE 10V, IC 10mA VCE 10V, IC 30mA IC 20mA, IB 2mA IC 20mA, IB 2mA VCB 20V, IE 0 f 1MHz VCE 20V, IC 10mA f 100MHz 50 25 40 40 0.5 0.9 3 4 V V pF pF MHz 100 100 nA nA VCB 200V, IE 0 VCB 160V, IE 0 100 100 nA nA Test Condition IC 100 A, IE 0 Min. 300 200 IC 1mA, IB 0 300 200 IE 100 A, IC 0 6 V V V Max. Units V V

BVCEO

BVEBO ICBO

VCE (sat) VBE (sat) Cob

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance : KSP42 : KSP43

fT

Current Gain Bandwidth Product

Pulse Test: PW300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

KSP42 Datasheet Fairchild Download PDF

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KSP42 DATASHEET