KSP44/45

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KSP44/45

KSP44/45
High Voltage Transistor
Collector-Emitter Voltage: VCEO KSP44: 400V KSP45: 350V Collector Power Dissipation: PC (max) 625mW
1

TO-92

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSP44 : KSP45 VCEO Collector-Emitter Voltage : KSP44 : KSP45 VEBO IC PC PC TJ Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta 25 C) Collector Power Dissipation (TC 25 C) Junction Temperature

1. Emitter 2. Base 3. Collector

Value 500 400 400 350 6 300 625 1.5 150

Units V V V V V mA mW W C

TSTG

Storage Temperature

-55 150

C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP44 : KSP45 Collector -Emitter Breakdown Voltage : KSP44 : KSP45 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP44 : KSP45 ICES Collector Cut-off Current : KSP44 : KSP45 IEBO hFE Emitter Cut-off Current DC Current Gain VCE 400V, IB 0 VCE 320V, IB 0 VEB 4V, IC 0 VCE 10V, IC 1mA VCE 10V, IC 10mA VCE 10V, IC 50mA VCE 10V, IC 100mA IC 1mA, IB 0.1mA IC 10mA, IB 1mA IC 50mA, IB 5mA IC 10mA, IB 1mA VCB 20V, IE 0, f 1MHz 40 50 45 40 0.5 0.5 0.1 200 A A A VCB 400V, IE 0 VCB 320V, IE 0 0.1 0.1 A A Test Condition IC 100 A, IB 0 Min. 500 400 IC 1mA, IB 0 400 350 IE 100 A, IC 0 6 V V V Max. Units V V

BVCEO

BVEBO ICBO

VCE (sat)

Collector-Emitter Saturation Voltage

0.4 0.5 0.75 0.75 7

V V V V pF

VBE (sat) Cob

Base-Emitter Saturation Voltage Output Capacitance

Pulse Test: PW300 s, Duty Cycle2%

2002 Fairchild Semiconductor Corporation

Rev. A2, November 2002

KSP45 Datasheet Fairchild Download PDF

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KSP45 DATASHEET